Clustering in the Epitaxial Growth of GaAs ON Si
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987
- Nucleation and growth of GaAs on Ge and the structure of antiphase boundariesJournal of Vacuum Science & Technology B, 1986
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlatticesJournal of Crystal Growth, 1979