Ultrathin 600°C Wet Thermal Silicon Dioxide

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Abstract
This paper describes the electrical quality of gate oxides grown at in a wet oxygen environment. The oxides were grown by carrying out the pyrogenic reaction of and at while keeping the temperature in the sample region at . Using this approach films with thicknesses ranging from 25 to have been grown. They exhibit leakage current densities comparable to high‐temperature thermal oxide films of the same thickness grown in dry oxygen at higher temperatures. Breakdown fields were found to be around independent of substrate orientation. Interface trap densities were determined to be in the range. Growth rates of were measured for (100) oriented substrates and for (111) surfaces. ©2000 The Electrochemical Society

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