Charge Transfer as an Alternative to Metastability of Defects in Semi-Insulating GaAs?
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1569
- https://doi.org/10.1143/jjap.29.l1569
Abstract
We have compared the variations of different paramagnetic signals, including that of the AsGa -related antisite, as revealed during 1.2 eV light exposures at 4.2 K, with those observed during a subsequent warming up in several semi-insulating GaAs samples. In addition to a confirmation of the sequence of acceptor levels regarding their energy depth, these experiments suggest a possibility of a mere charge transfer mechanism instead of a metastability for the photoquenchable AsGa-related deep donors.Keywords
This publication has 5 references indexed in Scilit:
- Charge transfer between paramagnetic photoquenchable anion antisites and electron-induced acceptors in GaAsJournal of Applied Physics, 1989
- Identification of EL2 in GaAsApplied Physics Letters, 1985
- Direct evidence for a charge-controlled dipolar structure of the EL2 complex center in semi-insulating GaAsJournal of Applied Physics, 1984
- Photoelectric memory effect in GaAsJournal of Applied Physics, 1982
- Electron Paramagnetic Resonance of Iron in Gallium ArsenidePhysical Review B, 1963