A function-fit model for the soft breakdown failure mode
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (6) , 265-267
- https://doi.org/10.1109/55.767093
Abstract
An empirical one parameter-based power law model for the leakage current through one or more soft breakdown spots in ultrathin (<5 nm) gate oxides is presented. Good fit to data can be obtained in nearly five decades of current from 0.5 to 5 V. In addition, it is shown that there exists a slight correlation between the parameters which describe the soft breakdown conduction characteristic and the stressing condition which triggers it.Keywords
This publication has 6 references indexed in Scilit:
- Point contact conduction at the oxide breakdown of MOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Soft Breakdown in Ultrathin SiO2 Layers: the Conduction Problem from a New Point of ViewJapanese Journal of Applied Physics, 1999
- Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdownJournal of Applied Physics, 1998
- Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxidesApplied Physics Letters, 1997
- Soft breakdown of ultra-thin gate oxide layersIEEE Transactions on Electron Devices, 1996
- MOSFET substrate current model for circuit simulationIEEE Transactions on Electron Devices, 1991