Ultimately thin SOI MOSFETs: special characteristics and mechanisms
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The fabrication of very thin Si films is an absolute priority for successfully scaling down the channel length of SOI MOSFETs below 50-100nm. While "ultra-thin" is a generic terminology for Si films 30-50 nm thick, the focus of this paper is on much thinner films, in the terminal range of 1-5 nm. N-channel MOSFETs, fabricated at NTT (Japan) on low-dose SIMOX substrates (62 nm thick buried oxide) have elevated, thicker source and drain, natural (residual) body doping, thick gate oxide (50 nm) and long channel (30 /spl mu/m to attenuate the parasitic influence of series resistances and device topology). The transistor body has been thinned by sacrificial oxidation.Keywords
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