Gold-based gate-sinking enhanced by inhomogeneities in power MESFETs

16 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (2) , 83-84
https://doi.org/10.1049/el:19870060

Abstract

Gate contact degradation of power MESFETs with gold-based gate metallisations is enhanced by local inhomogeneities, such as thermal gradients and border effects.

Keywords

TI DIFFUSION BARRIERS
AU-TI-GAAS METALLISATION
AU-GAAS INTERACTION
GATE CONTACT DEGRADATION
BORDER EFFECTS
LOCAL INHOMOGENEITIES
FAILURE MECHANISMS
THERMAL GRADIENTS
GATE-SINKING
POWER MESFETS

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