Thermal noise in the hot electron regime in FET's

1 October 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 18 (10) , 977
https://doi.org/10.1109/T-ED.1971.17315

Abstract

Klaassen has given two different formulas for the thermal noise in the conducting channel of FETs in the hot electron regime. It is shown that the first published formula is formally correct. A discussion is given of the equivalent noise temperature of the hot electrons.

Keywords

THERMAL
NOISE
PUBLISHED
FORMALLY
KLAASSEN
HOT ELECTRON REGIME
REGIME IN FET'S