Novel high-speed In 0.53 Ga 0.47 As/InP lateral phototransistor
- 28 March 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (7) , 308-310
- https://doi.org/10.1049/el:19850220
Abstract
A novel structure for a very small area In0.53 Ga0.47As/InP phototransistor on a semi-insulating InP substrate is proposed for single-mode fibre optic communication applications. An optical gain of 38 at 64 μW incident power was measured on the first batch of unoptimised devices. The emitter-base and base-collector junction areas were 50 and 100 μm2 respectively. Pulse response measurements using a picosecond dye laser indicated a rise time of 100 ps and a FWHM of 180 ps.Keywords
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