A 150-nanosecond associative memory using integrated MOS transistors

• 1 January 1966
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• Vol. IX, 104-105
• https://doi.org/10.1109/isscc.1966.1157714

Abstract

Keywords

• ASSOCIATIVE MEMORY
• MOSFETS
• FLIP-FLOPS
• VOLTAGE
• SIGNAL GENERATORS
• PULSE AMPLIFIERS
• SIGNAL TO NOISE RATIO
• THIN FILM CIRCUITS
• RESISTORS
• PROTECTION