Small valence-band offsets at GaN/InGaN heterojunctions
- 12 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (19) , 2577-2579
- https://doi.org/10.1063/1.118924
Abstract
The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the interface. We find that the “natural” valence-band offset between unstrained InN and GaN is 0.3 eV. Prescriptions are given, including the band shifts, due to strains at a pseudomorphic interface.Keywords
This publication has 15 references indexed in Scilit:
- Valence-band offsets and different band-gap behaviors of (β-GaN)/(β-AlN) superlattice and (α-GaN)/(α-AlN) superlatticeJournal of Applied Physics, 1996
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well LasersJapanese Journal of Applied Physics, 1996
- Band structures of II-VI semiconductors using Gaussian basis functions with separableab initiopseudopotentials: Application to prediction of band offsetsPhysical Review B, 1996
- Heterojunction band offset engineeringSurface Science Reports, 1996
- Volume-expansion-induced lattice instability and solid-state amorphizationPhysical Review B, 1996
- Theoretical study of the band offsets at GaN/AlN interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Strain and the interpretation of band-lineup measurementsPhysical Review Letters, 1987
- Deformation Potentials in Silicon. I. Uniaxial StrainPhysical Review B, 1962