Polar optical phonon scattering of charge carriers in alloy semiconductors: Effects of phonon localization
- 1 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1387-1391
- https://doi.org/10.1016/0038-1101(89)90245-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Picosecond Raman studies of the Fröhlich interaction in semiconductor alloysPhysical Review Letters, 1988
- Kash, Jha, and Tsang replyPhysical Review Letters, 1988
- Electron-phonon interactions in indium gallium arsenideSemiconductor Science and Technology, 1987
- Picosecond Raman studies of the Fröhlich interaction in semiconductor alloysPhysical Review Letters, 1987
- Raman Scattering in Alloy Semiconductors: "Spatial Correlation" ModelPhysical Review Letters, 1984
- Raman scattering from crystalline and amorphous (GaSb)1-xGex semiconducting filmsSolid State Communications, 1983
- Raman investigation of anharmonicity and disorder-induced effects inepitaxial layersPhysical Review B, 1981
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Application of a Modified Random-Element-Isodisplacement Model to Long-Wavelength Optic Phonons of Mixed CrystalsPhysical Review B, 1968
- Electrons in lattice fieldsAdvances in Physics, 1954