A new model of isothermal charge transport for negatively corona-charged Teflon

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Abstract
In this paper we study theoretically and experimentally the transport of electrons in Teflon FEP type A under isothermal conditions (145 °C) in open circuit. We suggest a theoretical model including surface, shallow, and deep traps. The model leads to a system of partial differential equations which was solved numerically using a finite‐step algorithm. By fitting the theoretical to the experimental surface‐voltage decay curves we found a shallow‐trap‐modulated mobility μQ=1.6×10−12 cm2/V sec, a deep‐trap‐modulated transit time tT=1.25×105 sec in the voltage range of −200 to −400 V for electrons in 25‐μm‐thick material. We also determined the time constants for surface injection, trapping, and detrapping. The deep‐trap‐modulated transit time is in good agreement with measured values. Further we found a voltage‐independent mean free path for the shallow‐trapped carriers λ=6.5 μm. These traps were assumed to be in thermal equilibrium with the free carriers in the conduction band.

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