Metastable donor states in Te- doped Gal−xAlxSb compounds
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 92-95
- https://doi.org/10.1016/0378-4363(83)90450-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Melt growth and some electrical properties of GaSb AlSb systemMaterials Research Bulletin, 1979
- Pressure‐Induced Slow Relaxation of the Free Electron Concentration in Undoped n‐Type InSbPhysica Status Solidi (b), 1976
- Electronic energy levels inalloysPhysical Review B, 1975
- Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbarPhysical Review B, 1968