Ion-implanted n-channel InP metal semiconductor field-effect transistor

1 May 1978

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 32 (9) , 578-581
https://doi.org/10.1063/1.90141

Abstract

Device‐quality n‐type layers have been produced by ion implantation in Fe‐doped semi‐insulating InP. ²⁹Si has been used as the dopant and anneals were carried out with the aid of a multiple‐layered encapsulant consisting of plasma‐deposited Si₃N₄ and pyrolytic P‐doped SiO₂. These layers have been used to make n‐channel MESFET’s for which gains of 13.7 and 9.8 dB were measured at 8 and 10 GHz, respectively. The gate metallization for these devices was Au. Low‐leakage currents and adequate gate breakdown characteristics were observed.

Keywords

This publication has 8 references indexed in Scilit:

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