Relation between electrical and optical gaps of amorphous semiconductors in the SiAsTe system
- 1 September 1973
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 12 (3) , 339-352
- https://doi.org/10.1016/0022-3093(73)90006-9
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Energy-band gap in SiAsTe amorphous semiconductorsSolid State Communications, 1972
- Energy-band gap and density of SiAsTe amorphous semiconductorsSolid State Communications, 1972
- Optical and electrical energy gaps in amorphous semiconductorsJournal of Non-Crystalline Solids, 1971
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970
- Review of optical and electrical properties of amorphous semiconductorsJournal of Non-Crystalline Solids, 1970
- Photoemission and optical studies of amorphous germaniumJournal of Non-Crystalline Solids, 1970
- Simple Band Model for Amorphous Semiconducting AlloysPhysical Review Letters, 1969
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- Thermal Expansion and Its Related Properties of Si-As-Te GlassesJournal of the Ceramic Association, Japan, 1969
- Drift Mobilities of Electrons and Holes and Space-Charge-Limited Currents in Amorphous Selenium FilmsPhysical Review B, 1962