Vacancies and Interstitial Atoms in Irradiated Silicon
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Point defects and their reactions in-irradiated GaAs investigated by x-ray-diffraction methodsPhysical Review B, 1996
- Frenkel pairs in low-temperature electron-irradiated InP: X-ray diffractionPhysical Review B, 1995
- Investigation of radiation damage by X-ray diffractionJournal of Nuclear Materials, 1994
- Understanding and Controlling Transient Enhanced Dopant Diffusion in SiliconMRS Proceedings, 1994
- F-Centers and Oxygen-Interstitials in MgOMRS Proceedings, 1992
- Point defects and dopant diffusion in siliconReviews of Modern Physics, 1989
- Defect Creation in SemiconductorsPublished by Springer Nature ,1975
- Investigation of Interstitials in Electron-Irradiated Aluminum by Diffuse-X-Ray Scattering ExperimentsPhysical Review B, 1973
- The theory of diffuse X-ray scattering and its application to the study of point defects and their clustersJournal of Physics F: Metal Physics, 1973
- Electron-Irradiation Effects in Silicon at Liquid-Helium Temperatures Using ac Hopping ConductivityPhysical Review B, 1971