The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy

• 1 January 1972
• journal article
• Published by The Electrochemical Society in Journal of the Electrochemical Society
• Vol. 119  (8) , 1119
• https://doi.org/10.1149/1.2404411

Abstract

Keywords

• PHASE EPITAXY
• SI HETEROJUNCTIONS
• GE GAAS
• GAP
• GROWTH OF GE