High-speed monolithic InP/InGaAs pin -photodiode array with small pitch
- 15 August 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (17) , 1550-1551
- https://doi.org/10.1049/el:19910972
Abstract
Monolithic arrays of four InP/lnGaAs pin photodiodes for wavelength division multiplexing applications have been fabricated on semi-insulating InP substrate. The diodes have a diameter of 30 μm on a 60 μm pitch. Deep trenches are used to isolate the individual diodes from each other. A crosstalk below −30 dB is achieved for frequencies up to about 3.3 GHz. Pulse measurements at the individual diodes show a falltime of 33 ps corresponding to a 3dB bandwidth in excess of 10 GHz.Keywords
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