THEORY OF DOPANT LEVEL DEPTHS IN a-Si
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C4) , C4-745
- https://doi.org/10.1051/jphyscol:19814163
Abstract
The energies of dopant levels in a-Si and a-Si : H are predicted and related to the dopant's orbital energies and silicon dangling bond energiesKeywords
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