Direct measurement of temperature profiles induced by finely focused beams

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Abstract
Beam processing of materials, such as recrystallization of amorphous semiconductors and annealing, is playing a major role in the advancement of electronics technology. Calculations of temperature profiles induced by different sorts of beams have already been reported. Here we describe the fabrication, calibration, and use of micron-size, thin-film thermocouples to measure steady state surface temperature profiles in silicon targets irradiated with 20- and 20-kV electron beams. Experimental temperature profiles are similar to, but somewhat sharper than, calculated profiles and the maximum measured temperatures exceed calculated values by about 15% at the center of the beam. This discrepancy may be due to errors in measuring beam radius and to inadequate representation of power dissipation in the target.

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