Prediction of thermal resistance in trench isolated bipolar device structures

27 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10889299,p. 207-210
https://doi.org/10.1109/bipol.1998.741926

Abstract

A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.

Keywords

THERMAL RESISTANCE
THERMAL CONDUCTIVITY
GEOMETRY
TEMPERATURE
SEMICONDUCTOR DEVICE MODELING
PREDICTIVE MODELS
ELECTRICAL RESISTANCE MEASUREMENT
POWER GENERATION
SOLID MODELING
INTEGRAL EQUATIONS

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Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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