Thermal Stresses in CVD Films: The Case of Binary Arsenosilicate Glasses

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Abstract
The heat‐treatment characteristics and surface morphology of binary arsenosilicate glass films vapor‐deposited on silicon have been studied systematically as a function of temperature and film composition. Initial heat‐treatments in Ar at 800° and up indicated that the thermal stresses generated in the film arising from a mismatch of expansion coefficient with the silicon substrate are largely responsible for the observed film detachment from the substrate. The higher the content in the glass, the lower is the temperature required to bring about the detachment. However, when the amount of in the deposited film is substantially reduced [to 0.5 mole per cent (m/o) [ film detachment can be eliminated altogether even at temperatures as high as 1100° Prolonged heat treatments of these low films yield very uniformly diffused N+ layers in silicon.

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