10-35 nanosecond magnetoresistive memories
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 26 (5) , 2532-2534
- https://doi.org/10.1109/20.104787
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Analysis of M-R elements for 10/sup 8/ bit/cm/sup 2/ arraysIEEE Transactions on Magnetics, 1989
- The design of a one megabit non-volatile M-R memory chip using 1.5*5 mu m cellsIEEE Transactions on Magnetics, 1988