Investigations of MOCVD-grown AlInAs-InP type II heterostructures

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Abstract
The authors report investigations of the low temperature optical properties of AlInAs-InP single heterojunctions and short period superlattices grown by atmospheric pressure MOCVD. Strong luminescence is observed and allows photoluminescence excitation measurements. Bandgaps are accurately determined from luminescence excitation and optical absorption spectra, and cross-checking optical data with structural properties yields a precise value (413 meV) of the conduction band offset in this system. This value deviates significantly from the prediction of the offset transitivity rule.