Low-Temperature Solid-State Phase Transformations in 2H Silicon Carbide
Open Access
- 1 April 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (4) , 1400-1408
- https://doi.org/10.1063/1.1661332
Abstract
Single crystals of 2HSiC were observed to undergo phase transformations at temperatures as low as 400°C. Some 2H crystals transformed to a structure with one‐dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6Hstructure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. Our observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid‐state transformation above 1400°C.This publication has 10 references indexed in Scilit:
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