Mechanism of bias-enhanced nucleation and heteroepitaxy of diamond on Si
- 1 May 1995
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 4 (5-6) , 549-552
- https://doi.org/10.1016/0925-9635(94)05288-3
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Experimental characterisation of bias-enhanced nucleation of diamond on SiDiamond and Related Materials, 1995
- Nucleation and initial growth phase of diamond thin films on (100) siliconPhysical Review B, 1994
- Investigations of diamond nucleation on a-C films generated by d.c. bias and microwave plasmaDiamond and Related Materials, 1994
- Atomic-force-microscopic study of heteroepitaxial diamond nucleation on (100) siliconApplied Physics Letters, 1993
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition processDiamond and Related Materials, 1993
- Nucleation mechanisms of diamond in plasma chemical vapor depositionDiamond and Related Materials, 1993
- Characterization of bias-enhanced nucleation of diamond on silicon byinvacuosurface analysis and transmission electron microscopyPhysical Review B, 1992
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Effects of surface pretreatments on nucleation and growth of diamond films on a variety of substratesApplied Physics Letters, 1991