Lattice heating of free-standing ultra-fine GaAs wires by hot electrons
- 1 March 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (3B) , B231-B234
- https://doi.org/10.1088/0268-1242/7/3b/055
Abstract
The authors extend their previous studies of the heating by DC electric fields of submicron-diameter free-standing wires of doped GaAs at low lattice temperatures. For lower fields, equivalent to sub-nanowatt dissipated power in their samples, all thermal processes could be accounted for in terms of electron heating alone. They consider here the regime where the hot electrons deposit some of their excess energy into the host lattice, they extract a characteristic electron-phonon scattering length that is an appreciable fraction of the sample length, and the authors provide evidence for ballistic phonon transport.Keywords
This publication has 6 references indexed in Scilit:
- Thermal transport in free-standing semiconductor fine wiresSuperlattices and Microstructures, 1991
- Nonequilibrium in metallic microstructures in the presence of high current densityPhysical Review B, 1990
- Quantum conductivity corrections in free-standing and supported n+-GaAs wiresJournal of Physics: Condensed Matter, 1990
- Electron heating effects in free-standing single-crystal GaAs fine wiresJournal of Physics: Condensed Matter, 1990
- Theory of thermal relaxation of electrons in metalsPhysical Review Letters, 1987
- Thermal anomalies in very fine structuresJournal of Physics C: Solid State Physics, 1982