Lattice-Scattering Mobility in Germanium
- 1 January 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 93 (1) , 62-63
- https://doi.org/10.1103/physrev.93.62
Abstract
The temperature dependence of lattice-scattering mobility in germanium is determined from conductivity. It is found to be for electrons and for holes. The result for holes suggests that the valence band is not at the center of the Brillouin zone. The ratio Hall mobility/conductivity mobility is also determined. It is found to be constant with temperature at ∼1.05 for electrons. The ratio for holes shows significant temperature dependence. This suggests that the valence band is composed of multiple surfaces of minimum energy.
Keywords
This publication has 4 references indexed in Scilit:
- Current Carrier Mobility Ratio in SemiconductorsPhysical Review B, 1953
- Experimental Confirmation of Relation between Pulse Drift Mobility and Charge Carrier Drift Mobility in GermaniumPhysical Review B, 1953
- The Temperature Dependence of Drift Mobility in GermaniumPhysical Review B, 1953
- Some Properties of High Resistivity-Type GermaniumPhysical Review B, 1950