Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure
- 1 August 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 2100-2102
- https://doi.org/10.1063/1.354730
Abstract
We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n‐type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi‐two‐dimensional electron gas. The Raman spectra contain a feature associated with the e1→e2 intersubband transition.This publication has 13 references indexed in Scilit:
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