Origin of Defects in MOCVD Growth of GaP on Silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Molecular beam epitaxial growth of GaAs on Si(211)Journal of Applied Physics, 1985
- Characterization of GaxIn1−xAs grown with TMInJournal of Electronic Materials, 1985
- GaAs growth in metal–organic MBEJournal of Vacuum Science & Technology B, 1985
- Faceted defects in GaAs epitaxial layersJournal of Crystal Growth, 1972