Electroless deposition of bumps for TAB technology
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 412-417 vol.1
- https://doi.org/10.1109/ectc.1990.122223
Abstract
Electroless nickel plating was investigated for bumping. Electroless nickel bumps with a height of 265 mu m have been selectively formed on aluminium bondpads. The nickel bumps have been inner-lead-bonded by gang bonding to a tape with a thick layer of tin. The adhesion of the bumps was investigated as a function of the pretreatment of the bondpads. It is noted that electroless bumping offers the greatest advantage of reducing the costs of the bumping process because no sputtering equipment or lithography is required. This can be very important if only small quantities of bumped dies are required because the process is independent of substrate size. Electroless bumping may become an alternative to conventional wafer bumping by electrodeposition at least for certain applications.<>Keywords
This publication has 1 reference indexed in Scilit:
- Selective Electroless Metal Deposition for Via Hole Filling in VLSI Multilevel Interconnection StructuresJournal of the Electrochemical Society, 1989