Binding energy of the biexcitons in isotropic semiconductors
- 1 July 1972
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 26 (1) , 143-151
- https://doi.org/10.1080/14786437208221025
Abstract
The dependence of the binding energy W of the biexciton on the electronhole mass ratio σ is discussed. The bounds from above and from below on the possible curves y = W (σ) have been obtained. In particular, the upper bound implies a positive binding of the biexcitons in the whole interval of the parameter σ. The bounds on W (σ) have been compared with experimental results on biexcitons in semiconductors.Keywords
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