A charge-oriented model for MOS transistor capacitances
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (5) , 703-708
- https://doi.org/10.1109/jssc.1978.1051123
Abstract
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the device rather than from capacitances. The effective capacitances which result are nonreciprocal. The model guarantees conservation of charge and includes bulk capacitances. Several circuit examples are considered.Keywords
This publication has 2 references indexed in Scilit:
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964