Increased rate of ozone adsorption on Si(111)-(7×7) with nitrogen preadsorption
- 1 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 402-404, 165-169
- https://doi.org/10.1016/s0039-6028(97)00958-8
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Comparison of initial oxidation of Si(111)7×7 with ozone and oxygen investigated by second harmonic generationJournal of Vacuum Science & Technology A, 1997
- Analysis by Surface-sensitive Second Harmonic Generation of Si(111)7×7 Exposed to High-purity Ozone Jet for Oxide Film FormationSurface and Interface Analysis, 1997
- Dispersion of optical second-harmonic generation of Si(111) 7×7 during oxygen adsorptionPhysical Review B, 1996
- Nitrided Silicon Oxide Gate Dielectrics for Submicron Device TechnologyMRS Proceedings, 1996
- X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity OzoneJapanese Journal of Applied Physics, 1995
- The interaction of molecular and atomic oxygen with Si(100) and Si(111)Surface Science Reports, 1993
- Evaluation of new ozone generator designed for oxide film formation by molecular beam epitaxy methodJournal of Vacuum Science & Technology A, 1991
- Ozone jet generator as an oxidizing reagent source for preparation of superconducting oxide thin filmReview of Scientific Instruments, 1991
- Optical Second Harmonic Generation at InterfacesAnnual Review of Physical Chemistry, 1989
- The reaction of Si(100) 2×1 with NO and NH3: The role of surface dangling bondsJournal of Vacuum Science & Technology B, 1987