Field-Effect Measurements on the HgCdTe Surface
- 1 September 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (10) , 4202-4204
- https://doi.org/10.1063/1.1658437
Abstract
Measurements of capacitance, dc surface conductance, and photoconductivity vs fieldplate voltage on metal‐insulator‐semiconductor (MIS) structures on 0.09‐eV bandgap HgCdTe are reported. Surface‐state density, effective surface charge, and field‐effect mobilities for electrons and holes are obtained and discussed. Below 100°K the electron field‐effect mobility is relatively high, and the field‐effect mobility ratio is comparable to the mobility ratio in bulk material.This publication has 4 references indexed in Scilit:
- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSbApplied Physics Letters, 1965
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Surface capacity of oxide coated semiconductorsSolid-State Electronics, 1965
- Calculation of the Capacitance of a Semiconductor Surface, with Application to SiliconIBM Journal of Research and Development, 1964