Sputter depositions of silicon film by a planar magnetron cathode equipped with three targets

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Abstract
This paper discusses the effects on uniformity of a newly developed planar magnetron cathode with three targets. The cathode is comprised of permanent magnets placed under the targets. Silicon films with a phosphorus concentration of up to 0.3 wt. % are successfully deposited from three phosphorus-doped, 4-in.-diam silicon targets, using the cathode in rf system. Surfaces of the three targets are equally sputter etched and doughnut shaped erosion patterns are formed. Sputter deposition by the cathode exhibits the advantage of improving film thickness uniformity. Moreover, it is experimentally demonstrated that low resistivity silicon films with an excellent uniformity are obtained. The cathode is very useful in fabricating films in advanced devices.

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