Defect study in GaAs bombarded by low-energy focused ion beams

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Abstract
GaAs was exposed to focused Ga+ beams at various beam energies ranging from 100 eV to 150 keV to investigate properties of defects induced by low-energy focused ion beams. Defect concentration and distribution profiles were measured by the deep-level transient spectroscopy technique. It was found that the defect concentration is greatly reduced for irradiation at a beam energy below 1 keV. Defects were observed even at a depth of ≥1500 Å, which is far beyond the ion range (∼15 Å) for 1-keV Ga+ . This indicates that the defect is induced by diffusion and trapping of mobile primary defects. It was also found that the defects induced by the low-energy irradiation are easily annealed out at 600 °C, while the defects induced by the high-energy irradiation still exist after annealing at 850 °C.

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