The FiBs, a new high voltage BiMOS switch
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Onset of current filamentation in GTO devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-voltage current saturation in emitter switched thyristorsIEEE Electron Device Letters, 1991
- System simulation and realization of a resonant inverter with a field-controlled thyristorIEEE Transactions on Power Electronics, 1991
- MOS-Controlled thyristors—A new class of power devicesIEEE Transactions on Electron Devices, 1986
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- The insulated gate rectifier (IGR): A new power switching devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982