Bias-Dependent Generation and Quenching of Defects in Pentacene

Preprint

31 December 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0312721

Abstract

We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.

Keywords

GENERATION AND QUENCHING
DEPENDENT GENERATION
DEFECT IN PENTACENE
BIAS DEPENDENT
METASTABLE
QUENCHING
PENTACENE
HOLE TRAP
TRAP

All Related Versions

Version 1, 2003-12-31, ArXiv
Published version: Physical Review Letters, 93 (7), 076601.

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