Abstract
Using video recording equipment we are able to visualize and study both the melting and freezing interfaces in lamp zone melting recrystallization of silicon on insulator (SOI) films. A so‐called ‘‘explosive’’ melting has been observed, corresponding to a noncontinuous advance of the front. We also show the effectiveness of an etched pattern in the underlying SiO2 on the modulation of the solidification front. We thereby confirm the entrainment effect of this pattern. We observe then the effect of the scan speed on the liquid/solid interface morphology together with the entrainment efficiency.