Raman scattering in metallic Si and Ge up to 50 GPa
- 6 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (14) , 2232-2234
- https://doi.org/10.1103/physrevlett.68.2232
Abstract
Optical phonons in metallic high-pressure phases of Si and Ge were studied up to 50 GPa by Raman scattering. Two Raman bands (LO, TO) were observed in the β-tin phase, one of which (LO) becomes soft on approaching the transition to primitive hexagonal. For hcp-Si there is one Raman-active mode (TO), and an additional mode is observed in the stability field of Si-VI. The available theoretical results agree within (10–20)% with the experimental results.Keywords
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