Electrical traps in GaAs microwave f.e.t.s
- 10 June 1976
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 12 (12) , 297-298
- https://doi.org/10.1049/el:19760229
Abstract
Described is a rapid, sensitive technique for determining the activation energies for electron traps present in the channel of GaAs microwave field-effect transistors. The measurements can be made directly on the f.e.t.s. Taken together with systematic variation of growth procedures, the method can be applied toward identification and elimination of the traps.Keywords
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