Evidence for ledge growth and lateral epitaxy of diamond single crystals synthesized by the combustion flame technique

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Abstract
The synthesis of diamond at high temperatures (≳1000 °C) utilizing the combustion flame technique is shown to result in the growth of diamond single crystals with a {100} habit. Evidence for ledge growth and lateral epitaxy of diamond on nondiamond substrates is presented and it is postulated that the propagation of {100} faces is enhanced by the presence of oxidizing specie in the flame ambient that preferentially remove nondiamond bonded species from the deposits as well as etch the diamond surface to create growth ledges. The ledges are most readily formed on {100} surfaces and single-crystal growth occurs by the lateral propagation of the ledges created by oxidation.