Silicidation Mechanism of Co/(Refractory-Metal) Bilayer and Epitaxial Growth of CoSi2 on Si(100) Substrate
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxial growth of CoSi2 on Si wafer using Co/Ta bilayerJournal of Applied Physics, 1993
- Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substratesJournal of Applied Physics, 1992
- Observation and analysis of epitaxial growth of CoSi2 on (100) SiJournal of Applied Physics, 1992
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991
- Thermodynamic considerations in refractory metal-silicon-oxygen systemsJournal of Applied Physics, 1984
- Prediction of Silicide First Phase and Phase Sequence from Heats of FormationMRS Proceedings, 1983