New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
- 1 November 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (11A) , L1445
- https://doi.org/10.1143/jjap.34.l1445
Abstract
We propose a new optical memory structure using self-assembled InAs quantum dots (QDs) for possible applications to wavelength-domain-multiplication memory, which should lead to increase memory density. Data stored in this memory structure can be read using photocurrent and then erased electrically. In a preliminary study, we confirmed the memory effect of photocurrent caused by the InAs QDs for the first time. A retention time of 0.48 ms for the memory was obtained at 300 K.Keywords
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