Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductors
- 15 April 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (8) , 4997-5006
- https://doi.org/10.1103/physrevb.27.4997
Abstract
We present some microscopic (atomic scale) structure analysis for Poisson-distributed impurities in semiconductors. Relevant concepts and results, well established in the area of geometrical probability, are employed in the analysis. Monte Carlo results for the distribution of "impurity-cluster" sizes in semiconductor media approximated by their continuum representation are also presented. A closed-form expression for the "impurity-doublet" probability and a general formulation for the impurity-cluster size distribution are also provided.Keywords
This publication has 14 references indexed in Scilit:
- On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in SemiconductorsPhysica Status Solidi (b), 1981
- Percolation theoryReports on Progress in Physics, 1980
- Statistical fluctuations of dopant impurities in ion-implanted bipolar transistor structures and the minimum device dimensions for vlsi system reliabilityMicroelectronics Reliability, 1980
- Variation of impurity−to−band activation energies with impurity densityJournal of Applied Physics, 1975
- Theory of Absorption of Electromagnetic Radiation by Molecule-Ion Traps inandPhysical Review B, 1973
- Clustering of randomly placed spheresBiometrika, 1972
- An introduction to percolation theoryAdvances in Physics, 1971
- Uniform Random Number GeneratorsJournal of the ACM, 1965
- An a priori determination of serial correlation in computer generated random numbersMathematics of Computation, 1961
- Stochastic Problems in Physics and AstronomyReviews of Modern Physics, 1943