Modified Stranski–Krastanov growth in stacked layers of self-assembled islands
- 1 March 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (9) , 1272-1274
- https://doi.org/10.1063/1.123522
Abstract
In a stack of vertically aligned Stranski–Krastanov grown islands, the critical thickness for planar growth for all but the initial dot layer is reduced, if the thickness of the spacer layer is smaller than a certain value We present structural and photoluminescence results on the basis of the extensively studied lattice-mismatched material system Si/Ge.
Keywords
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