Molecular-beam epitaxial growth of heavily acceptor doped GaAs layers for GaAlAs/GaAs heterojunction bipolar transistors
- 1 March 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (2) , 856-858
- https://doi.org/10.1116/1.586135
Abstract
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