High voltage characteristics of resurfed Schottky injection FETs
- 30 April 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (4) , 317-322
- https://doi.org/10.1016/0038-1101(89)90082-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The SINFET—A Schottky injection MOS-gated power transistorIEEE Transactions on Electron Devices, 1986
- Effects of drift region parameters on the static properties of power LDMOSTIEEE Transactions on Electron Devices, 1981
- Lateral DMOS Power transistor designIEEE Electron Device Letters, 1980