Transport properties of optically generated free carriers in hydrogenated amorphous silicon in the femtosecond time regime
- 15 February 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (7) , 3593-3597
- https://doi.org/10.1103/physrevb.47.3593
Abstract
We present spectral- and time-resolved reflectivity and transmission measurements on hydrogenated amorphous silicon, a-Si:H, with 50 fs time resolution. Electron-hole pairs are photoexcited into the extended states of a-Si:H by an ultrashort pump pulse at a photon energy of 2 eV. The optical response of photogenerated carriers is studied on an ultrashort time scale, Δt∼100 fs, after the excitation process where recombination and trapping can be neglected. The spectral dependence of the optical response is analyzed in terms of a hopping model for the transport of the photogenerated carriers in the extended states of a-Si:H.Keywords
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